Open AccessPEALD grown high-k ZrO-=SUB=-2-=/SUB=- thin films on SiC group IV compound semiconductor
Author(s) -
Anil G. Khairnar,
Vijay S. Patil,
Khushabu Agrawal,
Prerna A. Pandit,
Rahul S. Salunke,
Ashok M. Mahajan
Publication year - 2017
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2017.01.44008.8125
Subject(s) - x ray photoelectron spectroscopy , thin film , materials science , annealing (glass) , ellipsometry , analytical chemistry (journal) , semiconductor , surface roughness , atomic layer deposition , atomic force microscopy , chemical engineering , composite material , optoelectronics , nanotechnology , chemistry , chromatography , engineering
The study of ZrO 2 thin films on SiC group IV compound semiconductor has been studied as a high mobility substrates. The ZrO 2 thin films were deposited using the Plasma Enhanced Atomic Layer Deposition System. The thickness of the thin films were measured using ellipsometer and found to be 5.47 nm. The deposited ZrO 2 thin films were post deposited annealed in rapid thermal annealing chamber at temperature of 400 o C. The atomic force microscopy and x-ray photoelectron spectroscopy has been carried out to study the surface topography and roughness and chemical composition of thin film respectively. DOI: 10.21883/FTP.2017.01.8125