z-logo
open-access-imgOpen Access
Nanomechanical properties of SiC films grown from C{sub 60} precursors using atomic force microscopy
Author(s) -
K Morse,
M. Balooch,
A. V. Hamza,
J. Belak
Publication year - 1994
Language(s) - English
Resource type - Reports
DOI - 10.2172/96642
Subject(s) - nanoindentation , materials science , diamond , silicon nitride , substrate (aquarium) , elastic modulus , silicon , atomic force microscopy , composite material , conductive atomic force microscopy , nitride , nanotechnology , optoelectronics , layer (electronics) , oceanography , geology

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom