Measurement of the Auger Recombination Rate in p-type 0.54-eV GaInAsSb by Time-Resolved Photoluminescence | Zendy

С. Г. Аникеев | Zendy; D. Donetsky | Zendy; Gregory Belenky | Zendy; Serge Luryi | Zendy; C.A. Wang | Zendy; J.M. Borrego | Zendy; G. Nichols | Zendy

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Measurement of the Auger Recombination Rate in p-type 0.54-eV GaInAsSb by Time-Resolved Photoluminescence

Author(s) -

С. Г. Аникеев,

D. Donetsky,

Gregory Belenky,

Serge Luryi,

C.A. Wang,

J.M. Borrego,

G. Nichols

Publication year - 2003

Publication title -

osti oai (u.s. department of energy office of scientific and technical information)

Language(s) - English

Resource type - Reports

DOI - 10.2172/821378

Subject(s) - auger effect , photoluminescence , heterojunction , doping , recombination , auger , epitaxy , band gap , materials science , analytical chemistry (journal) , optoelectronics , auger electron spectroscopy , semiconductor , chemistry , atomic physics , nanotechnology , physics , biochemistry , layer (electronics) , chromatography , gene , nuclear physics

Auger recombination in p-type GaSb, InAs and their alloys is enhanced due to the proximity of the bandgap energy and the energy separation to the spin split-off valence band. This can affect the device performance even at moderate doping concentration. They report electron lifetime measurements in a p-type 0.54-eV GaInAsSb alloy, commonly used in a variety of infrared devices. They have studied a series of double-capped heterostructures with varied thicknesses and doping levels, grown by organometallic vapor phase epitaxy on GaSb substrates. The Auger coefficient value of 2.3 x 10{sup -28} cm{sup 6}/s is determined by analyzing the photoluminescence decay constants with a systematic separation of different recombination mechanisms

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