Manufacturable CuIn(Ga)Se{sub 2}-based solar cells via development of co-sputtered CuInSe{sub 2} absorber layers | Zendy

I. Eisgruber | Zendy

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Manufacturable CuIn(Ga)Se{sub 2}-based solar cells via development of co-sputtered CuInSe{sub 2} absorber layers

Author(s) -

I. Eisgruber

Publication year - 1999

Publication title -

osti oai (u.s. department of energy office of scientific and technical information)

Language(s) - English

Resource type - Reports

DOI - 10.2172/764593

Subject(s) - copper indium gallium selenide solar cells , yield (engineering) , photovoltaics , fabrication , materials science , photovoltaic system , optoelectronics , energy conversion efficiency , engineering physics , nanotechnology , solar cell , metallurgy , electrical engineering , engineering , medicine , alternative medicine , pathology

Yield and reproducibility remain issues in CuIn(Ga)Se{sub 2} (CIGS) photovoltaic module fabrication. While small-area cells (<1 cm{sup 2}) over 18% efficient have been reported, the best large-area manufactured devices (>1 ft{sup 2}) are 11% efficient with about 60% yield. If improvements in large-area manufacturing can accomplish 15% efficiency and 90% yield, the result is a doubling in throughput leading to a reduction in cost per watt of over 50%. The challenge now facing the photovoltaics industry is to bring the efficiencies of small-area cells and large-area industrial modules closer together and to raise manufacturing yields

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