Open AccessSilicon sheet growth by the inverted Stepanov technique. Quarterly report No. 4
Author(s) -
S. Berkman,
G. W. Cullen,
M. T. Duffy,
K.M. Kim
Publication year - 1977
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/7305309
Subject(s) - silicon , materials science , silicon nitride , chemical vapor deposition , ribbon , substrate (aquarium) , graphite , boron nitride , dissolution , analytical chemistry (journal) , mineralogy , chemical engineering , nanotechnology , metallurgy , crystallography , composite material , chemistry , oceanography , chromatography , geology , engineering
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom