Open AccessSilicon sheet growth by the Inverted Stepanov Technique. Quarterly report No. 2, annual report
Author(s) -
K. M. Kim,
G. W. Cullen,
S. Berkman,
A. E. Bell
Publication year - 1976
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/7237814
Subject(s) - ribbon , thermocouple , susceptor , materials science , temperature gradient , silicon , die (integrated circuit) , convection , thermal stability , mechanics , composite material , optoelectronics , chemistry , physics , nanotechnology , meteorology , epitaxy , organic chemistry , layer (electronics)
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