Open AccessSilicon sheet growth by the Inverted Stepanov Technique. Quarterly report No. 1, March 22, 1976--June 30, 1976
Author(s) -
K. M. Kim,
G. W. Cullen,
S. Berkman,
A. E. Bell
Publication year - 1976
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/7177573
Subject(s) - ribbon , silicon , die (integrated circuit) , materials science , pyrolytic carbon , etching (microfabrication) , seeding , composite material , mineralogy , nanotechnology , optoelectronics , chemistry , chemical engineering , thermodynamics , layer (electronics) , pyrolysis , engineering , physics
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