Open AccessProcess research of polycrystalline silicon material (PROPSM). Quarterly report No. 2, January 1, 1984-March 31, 1984
Author(s) -
J. Čulík
Publication year - 1984
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/7077171
Subject(s) - polycrystalline silicon , passivation , crystallite , silicon , materials science , voltage , engineering physics , optoelectronics , process (computing) , hydrogen , plasma , process engineering , nanotechnology , electrical engineering , computer science , chemistry , metallurgy , engineering , physics , layer (electronics) , operating system , thin film transistor , organic chemistry , quantum mechanics
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