Investigation of selected electrically active defects in polycrystalline silicon solar cell materials: Final subcontract report, 30 May 1986
Author(s) -
J. J. Hren
Publication year - 1987
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/6889508
Subject(s) - materials science , silicon , dislocation , wafer , grain boundary , electron beam induced current , polycrystalline silicon , stacking , transmission electron microscopy , crystalline silicon , composite material , solar cell , optoelectronics , crystallography , nanotechnology , microstructure , chemistry , layer (electronics) , organic chemistry , thin film transistor
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