z-logo
open-access-imgOpen Access
Investigation of selected electrically active defects in polycrystalline silicon solar cell materials: Final subcontract report, 30 May 1986
Author(s) -
J. J. Hren
Publication year - 1987
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/6889508
Subject(s) - materials science , silicon , dislocation , wafer , grain boundary , electron beam induced current , polycrystalline silicon , stacking , transmission electron microscopy , crystalline silicon , composite material , solar cell , optoelectronics , crystallography , nanotechnology , microstructure , chemistry , layer (electronics) , organic chemistry , thin film transistor

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom