Process research of polycrystalline silicon material (PROPSM). Quarterly report No. 3, April 1, 1984-June 30, 1984
Author(s) -
J. Čulík
Publication year - 1984
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/6653696
Subject(s) - polycrystalline silicon , crystallite , silicon , passivation , materials science , process (computing) , process engineering , engineering physics , optoelectronics , nanotechnology , computer science , metallurgy , engineering , layer (electronics) , thin film transistor , operating system
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