Open AccessEvaluation of local strain fields at (001) twist boundaries in silicon with transmission electron microscope diffraction: Final subcontract report
Author(s) -
T. Sullivan,
D. Ast
Publication year - 1987
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/6448150
Subject(s) - transmission electron microscopy , silicon , materials science , twist , semiconductor , grain boundary , polycrystalline silicon , electron microscope , strain (injury) , electron diffraction , diffraction , transmission (telecommunications) , engineering physics , optoelectronics , crystallography , optics , nanotechnology , composite material , chemistry , electrical engineering , physics , microstructure , engineering , geometry , mathematics , medicine , layer (electronics) , thin film transistor
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