Open AccessStructural and electronic properties of amorphous-silicon-based alloy materials. Final report, June 1983-May 1984
Author(s) -
D. K. Biegelsen,
W. Andrew Jackson,
J. B. Boyce,
N. M. Johnson,
R. J. Nemanich,
R. A. Street,
M. Stutzmann,
M. J. Thompson,
R. Thompson,
C. C. Tsai,
J. Zesch
Publication year - 1984
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/6258860
Subject(s) - dangling bond , photoconductivity , materials science , amorphous silicon , impurity , silicon , condensed matter physics , density of states , band gap , relaxation (psychology) , antibonding molecular orbital , electron , optoelectronics , chemistry , crystalline silicon , physics , atomic orbital , psychology , social psychology , organic chemistry , quantum mechanics
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