Compensation of dangling bonds in A-Si, Ge:H alloys. Annual report
Author(s) -
G. Lucovsky,
J. W. Cook,
R. A. Rudder,
W. B. Pollard,
ShoweMei Lin
Publication year - 1984
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/6194011
Subject(s) - dangling bond , sputter deposition , materials science , raman spectroscopy , impurity , silicon , conductivity , sputtering , analytical chemistry (journal) , chemistry , optoelectronics , nanotechnology , thin film , optics , physics , organic chemistry , chromatography
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