z-logo
open-access-imgOpen Access
Development of advanced Czochralski growth process to produce low-cost 150-kG silicon ingots from a single crucible for technology readiness. Second quarterly progress report, January 1-March 31, 1981
Publication year - 1981
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/6074546
Subject(s) - crucible (geodemography) , silicon , quarter (canadian coin) , atmosphere (unit) , process (computing) , materials science , economic analysis , metallurgy , process engineering , environmental science , computer science , engineering , chemistry , agricultural economics , physics , operating system , meteorology , geography , economics , archaeology , computational chemistry

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom