Open AccessMetallic impurities in gallium nitride grown by molecular beam epitaxy
Author(s) -
Scott A. McHugo,
J. Krueger,
C. Kisielowski
Publication year - 1997
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/603696
Subject(s) - microprobe , epitaxy , molecular beam epitaxy , impurity , analytical chemistry (journal) , metalorganic vapour phase epitaxy , chemical vapor deposition , materials science , photoluminescence , secondary ion mass spectrometry , transition metal , acceptor , gallium , optoelectronics , chemistry , mineralogy , mass spectrometry , nanotechnology , metallurgy , condensed matter physics , biochemistry , organic chemistry , physics , layer (electronics) , chromatography , catalysis
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