Open AccessProcess research on polycrystalline silicon material (PROPSM). Final technical report
Author(s) -
J. Čulík,
C. Wrigley
Publication year - 1984
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - Uncategorized
Resource type - Reports
DOI - 10.2172/6031521
Subject(s) - polycrystalline silicon , grain boundary , materials science , monocrystalline silicon , open circuit voltage , silicon , crystallite , carrier lifetime , passivation , solar cell , hydrogen , optoelectronics , diffusion , nanocrystalline silicon , short circuit , voltage , crystalline silicon , nanotechnology , electrical engineering , amorphous silicon , composite material , metallurgy , chemistry , microstructure , thin film transistor , physics , engineering , thermodynamics , organic chemistry , layer (electronics)
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