z-logo
open-access-imgOpen Access
AlGaAs/GaAs radiation-hardened photodiode for optoelectronic component applications
Author(s) -
Bernd Rose,
R.S.E. Keefe
Publication year - 1989
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - Uncategorized
Resource type - Reports
DOI - 10.2172/6000907
Subject(s) - photodiode , optoelectronics , diode , reliability (semiconductor) , detector , radiation hardening , materials science , fabrication , particle detector , photodetector , radiation , compound semiconductor , light emitting diode , optics , physics , layer (electronics) , nanotechnology , power (physics) , medicine , alternative medicine , epitaxy , pathology , quantum mechanics

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom