Open AccessLow-pressure chemical vapor deposition of amorphous silicon photovoltaic devices. Annual technical progress report, 1 May 1984-30 April 1985
Author(s) -
B. N. Baron,
Richard Rocheleau,
Steven Hegedus
Publication year - 1986
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/5965186
Subject(s) - chemical vapor deposition , disilane , materials science , photoconductivity , impurity , silicon , diffusion , amorphous silicon , band gap , activation energy , boron , optoelectronics , analytical chemistry (journal) , deposition (geology) , chemistry , crystalline silicon , thermodynamics , organic chemistry , paleontology , physics , sediment , biology
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