Quantitative analysis of defects in silicon: characterization of UCP, HAMCO, and microcrystalline material
Author(s) -
Ronald S. Cohen,
Guy S. Stringfellow,
R. Natesh,
J L Dunn
Publication year - 1985
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/5876111
Subject(s) - silicon , microcrystalline , materials science , neutron activation analysis , hydrogen , amorphous silicon , microcrystalline silicon , solar cell , characterization (materials science) , analytical chemistry (journal) , crystallography , crystalline silicon , optoelectronics , nanotechnology , radiochemistry , chemistry , organic chemistry , chromatography
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