Open AccessProcess research on polycrystalline-silicon material (PROPSM). Quarterly report No. 10, April 1, 1983 - June 30, 1983
Author(s) -
J. Čulík
Publication year - 1983
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/5796560
Subject(s) - polycrystalline silicon , materials science , wafer , getter , carrier lifetime , silicon , grain boundary , crystallite , optoelectronics , open circuit voltage , voltage , electrical engineering , composite material , metallurgy , microstructure , thin film transistor , layer (electronics) , engineering
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