Vacuum deposited polycrystalline silicon films for solar cell applications. Quarterly technical progress report No. 2, January 1-March 31, 1979
Author(s) -
Charles Feldman
Publication year - 1979
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/5718849
Subject(s) - polycrystalline silicon , silicon , substrate (aquarium) , crystallite , impurity , materials science , boron , solar cell , stoichiometry , chemical vapor deposition , secondary ion mass spectrometry , thin film , vacuum deposition , analytical chemistry (journal) , chemical engineering , optoelectronics , nanotechnology , mass spectrometry , chemistry , metallurgy , layer (electronics) , environmental chemistry , geology , oceanography , organic chemistry , chromatography , engineering , thin film transistor
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom