TEM and SEM (EBIC) investigations of silicon bicrystals. Quarterly report, April 1-June 31, 1983
Author(s) -
R. Gleichmann,
D. Ast
Publication year - 1983
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - Uncategorized
Resource type - Reports
DOI - 10.2172/5705189
Subject(s) - grain boundary , materials science , annealing (glass) , silicon , schottky diode , wafer , tilt (camera) , transmission electron microscopy , impurity , schottky barrier , condensed matter physics , crystallography , optoelectronics , nanotechnology , composite material , chemistry , microstructure , geometry , physics , mathematics , organic chemistry , diode
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