(X-ray studies of strain, interface and impurity in semiconductors)
Author(s) -
Yi-Han Kao
Publication year - 1989
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/5484891
Subject(s) - extended x ray absorption fine structure , materials science , heterojunction , semiconductor , impurity , doping , crystallography , xanes , analytical chemistry (journal) , epitaxy , absorption spectroscopy , spectral line , chemistry , nanotechnology , optoelectronics , optics , physics , organic chemistry , chromatography , layer (electronics) , astronomy
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