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Si deposition rates in a two-dimensional CVD (chemical vapor deposition) reactor and comparisons with model calculations
Author(s) -
W.G. Breiland,
Michael E. Coltrin
Publication year - 1989
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/5370171
Subject(s) - silane , disilane , chemical vapor deposition , deposition (geology) , helium , silicon , plasma enhanced chemical vapor deposition , chemistry , materials science , sticking coefficient , mechanics , analytical chemistry (journal) , nanotechnology , composite material , physics , organic chemistry , adsorption , paleontology , desorption , sediment , biology

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