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Preparation and characterization of amorphous silicon. Quarterly technical progress report No. 3, 1 December 1979-29 February 1980
Author(s) -
T. J. McMahon,
T. Donavan
Publication year - 1980
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/5305687
Subject(s) - amorphous silicon , characterization (materials science) , schottky diode , materials science , fabrication , amorphous solid , consistency (knowledge bases) , silicon , optoelectronics , photodiode , solar cell , diode , amorphous semiconductors , engineering physics , crystalline silicon , nanotechnology , computer science , engineering , chemistry , crystallography , medicine , alternative medicine , pathology , artificial intelligence

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