Development of advanced Czochralski growth process to produce low cost 150 kg silicon ingots from a single crucible for technology readiness. Fourth quarterly progress report, July 1-September 30, 1981
Publication year - 1981
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/5289238
Subject(s) - crucible (geodemography) , process engineering , automation , hygrometer , integrator , carbon monoxide , gas analysis , mechanical engineering , materials science , computer science , engineering , chemistry , electrical engineering , physics , meteorology , biochemistry , computational chemistry , voltage , humidity , catalysis
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