z-logo
open-access-imgOpen Access
Development of advanced Czochralski growth process to produce low cost 150 kg silicon ingots from a single crucible for technology readiness. Fourth quarterly progress report, July 1-September 30, 1981
Publication year - 1981
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/5289238
Subject(s) - crucible (geodemography) , process engineering , automation , hygrometer , integrator , carbon monoxide , gas analysis , mechanical engineering , materials science , computer science , engineering , chemistry , electrical engineering , physics , meteorology , biochemistry , computational chemistry , voltage , humidity , catalysis

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom