Open AccessGrain-boundary segregation in aluminum-doped silicon carbide
Author(s) -
Yo Tajima,
W. D. Kingery
Publication year - 1981
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - Uncategorized
Resource type - Reports
DOI - 10.2172/5082620
Subject(s) - silicon carbide , materials science , grain boundary , doping , silicon , diffusion , scanning transmission electron microscopy , aluminium , grain boundary diffusion coefficient , carbide , metallurgy , transmission electron microscopy , composite material , scanning electron microscope , crystallography , thermodynamics , nanotechnology , chemistry , microstructure , physics , optoelectronics
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom