Open AccessSilicon sheet growth by the inverted Stepanov technique. Final report, March 22, 1976--May 31, 1977
Author(s) -
K M Kim,
S. Berkman,
M. T. Duffy,
A. E. Bell,
Hunter Temple,
G. W. Cullen
Publication year - 1977
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/5078255
Subject(s) - crucible (geodemography) , ribbon , silicon , silicon nitride , materials science , susceptor , chemical vapor deposition , die (integrated circuit) , wetting , temperature gradient , composite material , dewetting , micro pulling down , metallurgy , nanotechnology , layer (electronics) , epitaxy , chemistry , computational chemistry , physics , quantum mechanics
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