The effects of machine parameters on residual stress determined using micro-Raman spectroscopy
Author(s) -
R G Sparks,
W S Enloe,
M. A. Paesler
Publication year - 1988
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/476641
Subject(s) - raman spectroscopy , silicon , residual stress , materials science , germanium , penetration depth , diamond , analytical chemistry (journal) , spectral line , deconvolution , residual , superposition principle , coherent anti stokes raman spectroscopy , diamond turning , optics , wavelength , molecular physics , chemistry , raman scattering , optoelectronics , composite material , physics , chromatography , algorithm , quantum mechanics , computer science , astronomy
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom