Open AccessOPTIMUM INITIAL DESIGN CRITERIA FOR THE IMPURITY PROFILES AND GEOMETRIES OF RADIATION HARDENED DIFFUSED SILICON P--N JUNCTION DEVICES.
Author(s) -
C. A. Goben,
J. Bereisa,
C. H. Irani,
Yu Han
Publication year - 1971
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/4707436
Subject(s) - impurity , silicon , materials science , optoelectronics , radiation , engineering physics , optics , chemistry , engineering , physics , organic chemistry
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