Open AccessA COMPARISON OF RADIATION TOLERANCE OF FIELD EFFECT AND BIPOLAR TRANSISTORS
Author(s) -
B. L. Gregory,
F. M. Smits
Publication year - 1964
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/4689073
Subject(s) - impurity , radiation tolerance , bipolar junction transistor , vacancy defect , radiation , irradiation , radiation damage , materials science , atomic physics , radiochemistry , transistor , chemistry , physics , condensed matter physics , nuclear physics , radiation therapy , voltage , medicine , organic chemistry , quantum mechanics
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