Open AccessINTRODUCTION RATE OF ELECTRICALLY ACTIVE DEFECTS IN N-TYPE SILICON BY NUCLEAR RADIATION
Author(s) -
J. Stein
Publication year - 1965
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/4570153
Subject(s) - silicon , radiation , electron , coulomb , atomic physics , scattering , irradiation , vacancy defect , materials science , condensed matter physics , physics , nuclear physics , optoelectronics , optics
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