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open-access-imgOpen AccessINTRODUCTION RATE OF ELECTRICALLY ACTIVE DEFECTS IN SILICON BY NUCLEAR RADIATION
Author(s)
H. J. Stein
Publication year1964
Resource typeReports
Subject(s)engineering , materials science , nuclear engineering , nuclear physics , optoelectronics , physics , radiation , silicon
Language(s)English
DOI10.2172/4061828

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