Open AccessROOM TEMPERATURE ANNEALING OF SILICON TRANSISTOR PARAMETERS DEGRADED BY A BURST OF NEUTRONS
Author(s) -
H. H. Sander
Publication year - 1964
Language(s) - English
Resource type - Reports
DOI - 10.2172/4043806
Subject(s) - annealing (glass) , materials science , silicon , optoelectronics , transistor , composite material , electrical engineering , engineering , voltage
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