Open AccessToward predictive simulations of candidate color centers in wide band gap semiconductors.
Author(s) -
Peter G. Schultz,
Andrew Mounce
Publication year - 2021
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Conference proceedings
DOI - 10.2172/1887043
Subject(s) - doping , ambipolar diffusion , materials science , semiconductor , band gap , thin film , optoelectronics , molecular beam epitaxy , engineering physics , nanotechnology , epitaxy , physics , plasma , layer (electronics) , quantum mechanics
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