Open AccessUltra-Wide-Bandgap Aluminum Gallium Nitride for Power-Conversion and Radio-Frequency Applications.
Author(s) -
Shahed Reza
Publication year - 2021
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Conference proceedings
DOI - 10.2172/1873063
Subject(s) - gallium nitride , optoelectronics , materials science , wide bandgap semiconductor , gallium , radio frequency , band gap , aluminium , nitride , gallium arsenide , electronic engineering , electrical engineering , engineering physics , computer science , telecommunications , nanotechnology , engineering , metallurgy , layer (electronics)
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