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Reduced temperature preparation of atomically clean Si surfaces to augment CMOS with atomic precision devices.
Author(s) -
Evan J. Anderson,
Luis Fabián Peña,
Esther Frederick,
John Mudrick,
DeAnna Campbell,
Aaron M. Katzenmeyer,
TzuMing Lu,
Andrew Leenheer,
Jeffrey Ivie,
Scott Schmucker,
David Scrymgeour,
Shashank Misra
Publication year - 2021
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Conference proceedings
DOI - 10.2172/1870755
Subject(s) - augment , cmos , materials science , optoelectronics , silicon , atomic layer deposition , temperature measurement , electronic engineering , nanotechnology , physics , engineering , thin film , philosophy , linguistics , quantum mechanics

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