Open AccessActivation Energy of Rapid Ge Diffusion along Si/SiO2 Interfaces during High Temperature Oxidation.
Author(s) -
Chappel Sharrock,
Benjamin Hicks,
Emily M. Turner,
George Wang,
Mark E. Law,
K. S. Jones
Publication year - 2021
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Conference proceedings
DOI - 10.2172/1862899
Subject(s) - activation energy , diffusion , materials science , silicon , germanium , energy (signal processing) , optoelectronics , chemical engineering , engineering physics , thermodynamics , chemistry , physics , engineering , quantum mechanics
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