Open AccessThe mystery of the missing neutral Si vacancy in 3C-SiC resolved.
Author(s) -
Peter J. Schultz,
Renee Van Ginhoven,
Arthur Edwards
Publication year - 2021
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Conference proceedings
DOI - 10.2172/1855928
Subject(s) - scattering , van der pauw method , electron mobility , materials science , schottky diode , wide bandgap semiconductor , atmospheric temperature range , condensed matter physics , diode , vacancy defect , tensile strain , electrical resistivity and conductivity , analytical chemistry (journal) , hall effect , crystallography , optoelectronics , ultimate tensile strength , chemistry , physics , optics , composite material , thermodynamics , quantum mechanics , chromatography
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