Open AccessMonolithically Integrated GaN Nanoscale Air Channel Field Emission Diode and Transistor.
Author(s) -
Keshab Sapkota,
A. Alec Talin,
François Léonard,
Barbara Kazanowksa,
K. S. Jones,
Brendan Gunning,
George T. Wang
Publication year - 2021
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Conference proceedings
DOI - 10.2172/1855318
Subject(s) - optoelectronics , materials science , nanoscopic scale , channel (broadcasting) , transistor , diode , field effect transistor , gallium nitride , field electron emission , light emitting diode , wide bandgap semiconductor , electrical engineering , nanotechnology , voltage , physics , engineering , layer (electronics) , quantum mechanics , electron
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