Open AccessIncorporation of Alloy Fluctuation Effects for Accurate Modeling of GaN/InGaN/GaN Light Emitting Diodes
Author(s) -
Sheikh Ifatur Rahman,
Zane Jamal-Eddine,
Zhanbo Xia,
Rob Armitage,
Siddharth Rajan
Publication year - 2021
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Conference proceedings
DOI - 10.2172/1855314
Subject(s) - light emitting diode , indium gallium nitride , optoelectronics , materials science , heterojunction , gallium nitride , diode , wide bandgap semiconductor , nitride , quantum well , indium , nanotechnology , optics , physics , layer (electronics) , laser
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