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Development of High-Voltage Vertical GaN PN Diodes (invited).
Author(s) -
Robert Kaplar,
Brendan Gunning,
Andrew A. Allerman,
Mary H. Crawford,
Jack Flicker,
Andrew Armstrong,
Luke Yates,
Andrew Binder,
Jeramy Ray Dickerson,
Gregory Pickrell,
Paul Sharps,
Travis Anderson,
James C. Gallagher,
Alan G. Jacobs,
Andrew D. Koehler,
Marko J. Tadjer,
Karl D. Hobart,
Mona A. Ebrish,
Matthew Porter,
Rafael Perez Martinez,
Ke Zeng,
Dongfeng Ji,
Sauvik Chowdhury,
Özgür Aktaş,
James A. Cooper
Publication year - 2020
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Conference proceedings
DOI - 10.2172/1835968
Subject(s) - optoelectronics , diode , materials science , voltage , wide bandgap semiconductor , gallium nitride , light emitting diode , electrical engineering , engineering physics , physics , engineering , nanotechnology , layer (electronics)

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