Open AccessVertical Gallium Nitride (GaN) Transistors For Extreme Environments
Author(s) -
D. J. Ewing
Publication year - 2021
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - Uncategorized
Resource type - Conference proceedings
DOI - 10.2172/1832997
Subject(s) - jfet , mesfet , materials science , optoelectronics , gallium nitride , schottky barrier , junction temperature , schottky diode , transistor , leakage (economics) , substrate (aquarium) , wide bandgap semiconductor , gallium arsenide , thermal conduction , electrical engineering , field effect transistor , thermal , diode , nanotechnology , voltage , composite material , engineering , layer (electronics) , oceanography , physics , geology , meteorology , economics , macroeconomics
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