z-logo
open-access-imgOpen Access
Low-Temperature Processing for Atomically Precise Dopant Incorporation with CMOS Integration.
Author(s) -
Scott Schmucker,
Evan M. Anderson,
Esther Frederick,
Jeffrey Ivie,
Ezra Bussmann,
DeAnna Campbell,
Lisa Tracy,
TzuMing Lu,
Ping Lu,
George Wang,
Daniel R. Ward,
Shashank Misra
Publication year - 2020
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Conference proceedings
DOI - 10.2172/1830910
Subject(s) - dopant , cmos , materials science , optoelectronics , dopant activation , temperature measurement , doping , computer science , engineering physics , electronic engineering , physics , engineering , quantum mechanics

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom