Open AccessGallium Nitride Superjunction Fin Field Effect Transistor (Continued Funding Report)
Author(s) -
Noah Allen,
Lars F. Voss,
Clint D. Frye,
Kyoung E. Kweon,
Joel B. Varley,
Qinghui Shao
Publication year - 2021
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - Uncategorized
Resource type - Reports
DOI - 10.2172/1826468
Subject(s) - optoelectronics , gallium nitride , materials science , transistor , electrical engineering , diffusion , terminal (telecommunication) , nitride , power semiconductor device , voltage , mosfet , engineering physics , power (physics) , electronic engineering , computer science , engineering , nanotechnology , physics , telecommunications , layer (electronics) , thermodynamics , quantum mechanics
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