Open AccessCan fitting of accelerated TDDB with a simple function of E predict the dielectric degradation under operating voltages?.
Author(s) -
Gad Haase
Publication year - 2020
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Conference proceedings
DOI - 10.2172/1825587
Subject(s) - degradation (telecommunications) , time dependent gate oxide breakdown , materials science , dielectric , voltage , electric breakdown , simple (philosophy) , dielectric strength , electronic engineering , function (biology) , optoelectronics , electrical engineering , engineering , gate dielectric , transistor , philosophy , epistemology , evolutionary biology , biology
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