Open AccessElectrically Detected Magnetic Resonance Study of High-Field Stress Induced Si/SiO<sub>2</sub> Interface Defects [Slides]
Author(s) -
Stephen Moxim,
Patrick M. Lenahan,
Fedor Sharov,
Gad Haase,
David Russell Hughart
Publication year - 2020
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - Uncategorized
Resource type - Conference proceedings
DOI - 10.2172/1824929
Subject(s) - materials science , interface (matter) , stress (linguistics) , magnetic field , condensed matter physics , nuclear magnetic resonance , optoelectronics , field (mathematics) , physics , composite material , linguistics , philosophy , mathematics , capillary number , quantum mechanics , capillary action , pure mathematics
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