Open Accessp-i-n High-Speed Photodiodes for X-RAY and Infrared Imagers Fabricated by <em>In-Situ</em>-Doped APCVD Germanium Homoepitaxy
Author(s) -
Charles E. Hunt,
A. C. Carpenter,
Lars F. Voss,
Robin Scott,
Qinghui Shao,
Quinn Looker,
Anne Garafalo,
Sergey Mistyuk,
C. E. Durand,
Kumar Ankit,
Jean-Paul Stroud,
Klaus van Benthem
Publication year - 2021
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/1809171
Subject(s) - materials science , photodiode , wafer , germanium , optoelectronics , infrared , doping , chemical vapor deposition , microsecond , diode , analytical chemistry (journal) , dark current , avalanche photodiode , optics , silicon , photodetector , chemistry , detector , physics , chromatography
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