Open AccessResponse of GaN-Based Semiconductor Devices to Ion and Gamma Irradiation
Author(s) -
Brandon Adrian Aguirre,
Joseph King,
Jack Manuel,
György Vizkelethy,
Edward S. Bielejec,
Patrick Griffin
Publication year - 2020
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/1668935
Subject(s) - irradiation , materials science , optoelectronics , radiation , fluence , light emitting diode , annealing (glass) , ion beam , ion , radiation hardening , radiation damage , semiconductor , optics , physics , nuclear physics , quantum mechanics , composite material
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom