Open AccessCapacitance of a Ge/SiGe heterostructure field-effect transistor
Author(s) -
A. V. Suslov,
TzuMing Lu
Publication year - 2018
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/1484586
Subject(s) - optoelectronics , capacitance , materials science , heterojunction , field effect transistor , transistor , silicon germanium , electrical engineering , silicon , chemistry , engineering , voltage , electrode
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom